Перегляд за автором "Gudymenko, O.Yo."

Сортувати за: Порядок: Результатів:

  • Formation of silicon nanoclusters in buried ultra-thin oxide layers 
    Oberemok, O.S.; Litovchenko, V.G.; Gamov, D.V.; Popov, V.G.; Melnik, V.P.; Gudymenko, O.Yo.; Nikirin, V.A.; Khatsevich, І.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for ...
  • Influence of deposition rate and substrate temperature on structure and optical features of NiO thin film 
    Oberemok, O.S.; Sabov, T.M.; Lisovskyy, I.P.; Khacevych, I.M.; Gudymenko, O.Yo.; Nikirin, V.A.; Voitovych, M.V. (Functional Materials, 2016)
    Nickel oxide thin films were prepared by direct-current magnetron sputtering method at different deposition rates on unheated and heated substrates. It was shown that the deposited films are the dense arrays of nanowhiskers ...
  • Influence of small miscuts on self-ordered growth of Ge nanoislands 
    Gudymenko, O.Yo.; Kladko, V.P.; Yefanov, O.M.; Slobodian, M.V.; Polischuk, Yu.S.; Krasilnik, Z.F.; Lobanov, D.V.; Novikov, А.А. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Using high-resolution X-ray diffraction (HRXRD), we have investigated lateral ordering the nanoislands formed from Ge wetting layer of various thicknesses deposited on a strained Si₁₋xGex sublayer. We observed that the ...
  • Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry 
    Fodchuk, І.М.; Dovganyuk, V.V.; Litvinchuk, Т.V.; Kladko, V.P.; Slobodian, М.V.; Gudymenko, O.Yo.; Swiatek, Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Structural changes in silicon single crystals irradiated with high-energy electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines ...